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Results 1 to 20 of 41 for query "A Baldereschi". (0.01 sec.)

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1.

Coordination defects in a-Si and a-Si:H : a characterization from first principles calculations
M. Peressi; M. Fornari; S. de Gironcoli; L. De Santis; A. Baldereschi;
8 Jun 1999

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2.

Baldereschi, Posternak, and Resta reply
A Baldereschi; M Posternak; R Resta;
13 Jul 1992 / Phys Rev Lett, 69 (2), 390

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3.

Polarized Wannier functions: ab-initio study of the dielectric properties of silicon and gallium arsenide
Pablo Fernández; Andrea Dal Corso; Alfonso Baldereschi;
22 May 1998

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4.

Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs
A Baldereschi; S Baroni; R Resta;
8 Aug 1988 / Phys Rev Lett, 61 (6), 734-737

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5.

Towards a quantum theory of polarization in ferroelectrics: The case of KNbO3
R Resta; M Posternak; A Baldereschi;
15 Feb 1993 / Phys Rev Lett, 70 (7), 1010-1013

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6.

Band-structure picture for MnO reexplored: A model GW calculation
S Massidda; A Continenza; M Posternak; A Baldereschi;
20 Mar 1995 / Phys Rev Lett, 74 (12), 2323-2326

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7.

Adatom-vacancy mechanisms for the C6)/Al111-(6 x 6) reconstruction
M Stengel; A De Vita; A Baldereschi;
17 Oct 2003 / Phys Rev Lett, 91 (16), 166101

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8.

Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids
Dal Corso A; A Pasquarello; A Baldereschi; R Car;
15 Jan 1996 / Phys Rev B, 53 (3), 1180-1185

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9.

Schottky barrier heights at polar metal/semiconductor interfaces
C. Berthod; N. Binggeli; A. Baldereschi;
16 Jun 2003 / Phys. Rev. B 68, 085323 (2003)

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10.

Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides
K. A. Mader; H. von Kanel; A. Baldereschi;
12 May 1993

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11.

Electronic structure of InP/Ga0.47In0.53As interfaces
M Peressi; S Baroni; A Baldereschi; R Resta;
15 Jun 1990 / Phys Rev E, 41 (17), 12106-12110

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12.

Quasiparticle energies in semiconductors: Self-energy correction to the local-density approximation
F Gygi; A Baldereschi;
1 May 1989 / Phys Rev Lett, 62 (18), 2160-2163

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13.

Work functions at facet edges
C J Fall; N Binggeli; A Baldereschi;
15 Apr 2002 / Phys Rev Lett, 88 (15), 156802

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14.

Self-consistent Hartree-Fock and screened-exchange calculations in solids: Application to silicon
F Gygi; A Baldereschi;
15 Sep 1986 / Phys Rev B, 34 (6), 4405-4408

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15.

Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices
P Boguslawski; A Baldereschi;
15 Apr 1989 / Phys Rev B, 39 (11), 8055-8058

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16.

Tuning band offsets at semiconductor interfaces by intralayer deposition
M Peressi; S Baroni; R Resta; A Baldereschi;
15 Mar 1991 / Phys Rev B, 43 (9), 7347-7350

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17.

Determination of the hole effective masses in GaAs from acceptor spectra
N Binggeli; A Baldereschi;
15 Jun 1991 / Phys Rev B, 43 (18), 14734-14737

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18.

Analysis of acceptor chemical shifts in Ge
N Binggeli; A Baldereschi;
15 Mar 1992 / Phys Rev B, 45 (11), 5944-5952

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19.

Unrestricted Hartree-Fock approach to the insulating behavior of antiferromagnetic CaCuO2
S Massidda; M Posternak; A Baldereschi;
1 Nov 1992 / Phys Rev B, 46 (18), 11705-11708

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20.

Hartree-Fock LAPW approach to the electronic properties of periodic systems
S Massidda; M Posternak; A Baldereschi;
15 Aug 1993 / Phys Rev B, 48 (8), 5058-5068

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